Characterization of liquid-phase sensor utilizing gan-based two terminal devices
GaN-based HEMT structures are versatile structures that may be used for a variety of sensing applications. Due to their low intrinsic carrier concentrations, wide band gap semiconductor sensors based on GaN can be operated at lower current levels than conventional Si-based devices and offer the capa...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Published: |
American Institute of Physics
2011
|
| Subjects: |