Characterization of liquid-phase sensor utilizing gan-based two terminal devices
GaN-based HEMT structures are versatile structures that may be used for a variety of sensing applications. Due to their low intrinsic carrier concentrations, wide band gap semiconductor sensors based on GaN can be operated at lower current levels than conventional Si-based devices and offer the capa...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Published: |
American Institute of Physics
2011
|
| Subjects: |
| _version_ | 1796858618551730176 |
|---|---|
| author | Zainal Abidin, Mastura Shafinaz Wang, Soo Jeat Hashim, Abdul Manaf Abdul Rahman, Shaharin Fadzli Sharifabad, Maneea Eizadi |
| author_facet | Zainal Abidin, Mastura Shafinaz Wang, Soo Jeat Hashim, Abdul Manaf Abdul Rahman, Shaharin Fadzli Sharifabad, Maneea Eizadi |
| author_sort | Zainal Abidin, Mastura Shafinaz |
| collection | ePrints |
| description | GaN-based HEMT structures are versatile structures that may be used for a variety of sensing applications. Due to their low intrinsic carrier concentrations, wide band gap semiconductor sensors based on GaN can be operated at lower current levels than conventional Si-based devices and offer the capability of detection up to 600 °C [1–5]. The ability of electronic devices fabricated on these materials to operate in high temperature, high power and high flux/energy radiation conditions enable performance enhancements in a wide variety of spacecraft, satellite, homeland defense, mining, automobile, nuclear power, and radar applications. |
| first_indexed | 2024-03-05T19:15:08Z |
| format | Article |
| id | utm.eprints-44783 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T19:15:08Z |
| publishDate | 2011 |
| publisher | American Institute of Physics |
| record_format | dspace |
| spelling | utm.eprints-447832017-09-13T03:53:56Z http://eprints.utm.my/44783/ Characterization of liquid-phase sensor utilizing gan-based two terminal devices Zainal Abidin, Mastura Shafinaz Wang, Soo Jeat Hashim, Abdul Manaf Abdul Rahman, Shaharin Fadzli Sharifabad, Maneea Eizadi TA Engineering (General). Civil engineering (General) GaN-based HEMT structures are versatile structures that may be used for a variety of sensing applications. Due to their low intrinsic carrier concentrations, wide band gap semiconductor sensors based on GaN can be operated at lower current levels than conventional Si-based devices and offer the capability of detection up to 600 °C [1–5]. The ability of electronic devices fabricated on these materials to operate in high temperature, high power and high flux/energy radiation conditions enable performance enhancements in a wide variety of spacecraft, satellite, homeland defense, mining, automobile, nuclear power, and radar applications. American Institute of Physics 2011 Article PeerReviewed Zainal Abidin, Mastura Shafinaz and Wang, Soo Jeat and Hashim, Abdul Manaf and Abdul Rahman, Shaharin Fadzli and Sharifabad, Maneea Eizadi (2011) Characterization of liquid-phase sensor utilizing gan-based two terminal devices. AIP Conference Proceedings, 1341 . pp. 434-439. ISSN 0094-243X |
| spellingShingle | TA Engineering (General). Civil engineering (General) Zainal Abidin, Mastura Shafinaz Wang, Soo Jeat Hashim, Abdul Manaf Abdul Rahman, Shaharin Fadzli Sharifabad, Maneea Eizadi Characterization of liquid-phase sensor utilizing gan-based two terminal devices |
| title | Characterization of liquid-phase sensor utilizing gan-based two terminal devices |
| title_full | Characterization of liquid-phase sensor utilizing gan-based two terminal devices |
| title_fullStr | Characterization of liquid-phase sensor utilizing gan-based two terminal devices |
| title_full_unstemmed | Characterization of liquid-phase sensor utilizing gan-based two terminal devices |
| title_short | Characterization of liquid-phase sensor utilizing gan-based two terminal devices |
| title_sort | characterization of liquid phase sensor utilizing gan based two terminal devices |
| topic | TA Engineering (General). Civil engineering (General) |
| work_keys_str_mv | AT zainalabidinmasturashafinaz characterizationofliquidphasesensorutilizingganbasedtwoterminaldevices AT wangsoojeat characterizationofliquidphasesensorutilizingganbasedtwoterminaldevices AT hashimabdulmanaf characterizationofliquidphasesensorutilizingganbasedtwoterminaldevices AT abdulrahmanshaharinfadzli characterizationofliquidphasesensorutilizingganbasedtwoterminaldevices AT sharifabadmaneeaeizadi characterizationofliquidphasesensorutilizingganbasedtwoterminaldevices |