Mobility diminution in a nano-mosfet due to carrier injection from the ohmic contacts
The mobility is being ballistic when the mean free path in a nanoscale transistor exceeds the channel length. The ballistic mobility is modeled and interpreted by analyzing transient velocity response to the electric field. The new model includes the transit-time delay that may become comparable to...
| Main Authors: | , , , |
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| Format: | Article |
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American Institute of Physics
2011
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