Germanium growth in low dimensions based on relaxed-porous silicon by using a simple way of electrochemical deposition
Porous silicon (PS) technology was used to grow Ge micro-flower on the surface of Si substrates with rough morphology. Low dimensions nanorods were also fabricated directly on the Si substrates through Ge deposition using a simple and low-cost of electrodeposition method for comparison. The characte...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
2012
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/47032/1/JawadMJ2012_GermaniumGrowthinLowDimensions.pdf |