Germanium growth in low dimensions based on relaxed-porous silicon by using a simple way of electrochemical deposition
Porous silicon (PS) technology was used to grow Ge micro-flower on the surface of Si substrates with rough morphology. Low dimensions nanorods were also fabricated directly on the Si substrates through Ge deposition using a simple and low-cost of electrodeposition method for comparison. The characte...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
2012
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Subjects: | |
Online Access: | http://eprints.utm.my/47032/1/JawadMJ2012_GermaniumGrowthinLowDimensions.pdf |