Graphene as a buffer layer for silicon carbide-on-insulator structures

Graphene as a buffer layer for silicon carbide-on-insulator structures

We report an innovative technique for growing the silicon carbide-on-insulator (SiCOI) structure by utilizing polycrystalline single layer graphene (SLG) as a buffer layer. The epitaxial growth was carried out using a hot-mesh chemical vapor deposition (HM-CVD) technique. Cubic SiC (3C-SiC) thin fil...

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Bibliographic Details
Main Authors: Astuti, B., Tanikawa, M., Rahman, S. F. A., Yasui, K., Hashim, A. M.
Format: Article
Language:English
Published: MDPI AG 2012
Subjects:
TH Building construction
Online Access:http://eprints.utm.my/47034/1/AstutiB2012_GrapheneasaBufferLayerforSiliconCarbide.pdf

Internet

http://eprints.utm.my/47034/1/AstutiB2012_GrapheneasaBufferLayerforSiliconCarbide.pdf

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