Modeling of drain current for grooved-gate mosfet

A drain current model of grooved-gate MOSFET which is based on the difference of the channel depth distance along the channel from the source to the drain in cylindrical coordinate is presented in this paper. From the analysis, the potential of grooved-gate is related to geometry structure parameter...

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Bibliographic Details
Main Authors: Suseno, Jatmiko Endro, Anwar, Sohail, Riyadi, Munawar Agus, Ismail, Razali
Format: Article
Published: American Scientific Publishers 2012
Subjects: