Analytical modeling of trilayer graphene nanoribbon schottky-barrier fet for high-speed switching applications
Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistor s. The current–voltage characteristic of...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Springer Link
2013
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| Subjects: | |
| Online Access: | http://eprints.utm.my/50441/1/MohammadTaghiAhmadi2013_Analyticalmodelingoftrilayer.pdf |