Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors
Carbon nanotubes (CNT) and silicon nanowires (Si NW) are nominated as the channel material for the next generation of transistors. Although previous works have shown that both CNT- and Si NW- based Field-Effect-Transistors (FET) are able to deliver better performance than conventional devices, phono...
| Main Author: | |
|---|---|
| Format: | Thesis |
| Language: | English |
| Published: |
2015
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/54069/1/ChinHueiChaengMFKE2015.pdf |