Gallium nitride nanowire by nitridation of electrochemically grown gallium oxide on silicon

GaN is a wide bandgap semiconductor with superb thermal, chemical, mechanical and electrical properties which makes it suitable for high power electronic and optoelectronic devices. Si substrate is preferable for the heterostructure growth of GaN due to its availability in large wafer size, low pric...

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Bibliographic Details
Main Author: Mohd. Ghazali, Norizzawati
Format: Thesis
Language:English
Published: 2015
Subjects:
Online Access:http://eprints.utm.my/54607/1/NorizzawatiMohdGhazaliMMJIIT2015.pdf