A review of graphene based field effect transistor architecture and channel geometry
The aggressive scaling of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in nanometer scale promises low-power consumption, low energy delay product, high density as well as high processor speed. However, this phenomenon leads to short channel effects when the scaling approaches its phys...
Main Authors: | , |
---|---|
Format: | Article |
Published: |
American Scientific Publishers
2015
|
Subjects: |