Modeling and analysis of ballistic carbon nanotube field effect transistor (CNTFET) with quantum transport concept
Aggressive scaling of CMOS has led to higher and higher integration density, the higher performance of devices, low power consumption and more complex function. However, it will eventually reach its limit in future. As device sizes approach the nanoscale, new opportunities arise from harnessing the...
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| Format: | Thesis |
| Language: | English |
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2007
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| Online Access: | http://eprints.utm.my/6103/1/HengChinChuanMFKE2007.pdf |