Gas phase analysis of SIC film deposition in PECVD using FTIR spectroscopy
Fourier Transform Infrared Spectroscopy was used to investigate the gas phase reactions during the deposition process of Silicon Carbide (SiC) film using VelY High Frequency - Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD). The VHFPECVD operated at plasma excitation frequency of J50MHz and 25...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2015
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| Subjects: |