Self-assembled Ge/Si nanoislands: effect of argon flow and radio frequency power
The growth of a germanium-silicon (Ge/Si) heterostructure using radio frequency (rf) magnetron sputtering under optimized conditions is performed. High-density self-assembled Ge nanoislands ∼14 nm in size are obtained directly on Si(100) under 10 sccm argon (Ar) flow and 100 W rf power. The surface...
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| Format: | Article |
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IOP Publishing Ltd
2014
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