Optimization of ion implantation using trim software for the formation of shallow n+/p junction in germanium substrate
Silicon (Si) device down-scaling is facing a big challenge to maintain its high drive current capability along with lower leakage current. Due to its similarities with Si, the interest has been focused on Germanium (Ge) as a substitute for device substrate. However, there are major problems in fabri...
Main Authors: | , , , , , , , |
---|---|
Format: | Conference or Workshop Item |
Language: | English |
Published: |
2015
|
Subjects: | |
Online Access: | http://eprints.utm.my/63400/1/SatoruMatsumoto2015_OptimizationofIonImplantationUsingTrimSoftware.pdf |