Optimization of ion implantation using trim software for the formation of shallow n+/p junction in germanium substrate
Silicon (Si) device down-scaling is facing a big challenge to maintain its high drive current capability along with lower leakage current. Due to its similarities with Si, the interest has been focused on Germanium (Ge) as a substitute for device substrate. However, there are major problems in fabri...
| Main Authors: | , , , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://eprints.utm.my/63400/1/SatoruMatsumoto2015_OptimizationofIonImplantationUsingTrimSoftware.pdf |
| _version_ | 1796861453092782080 |
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| author | Abdul Aziz, Umar Nur Farhana Arissa, Nur Farhana Arissa Aid, Siti Rahmah Yahaya, Hafizal Centeno, Anthony Matsumoto, Satoru Uedono, Akira Mcphail, David |
| author_facet | Abdul Aziz, Umar Nur Farhana Arissa, Nur Farhana Arissa Aid, Siti Rahmah Yahaya, Hafizal Centeno, Anthony Matsumoto, Satoru Uedono, Akira Mcphail, David |
| author_sort | Abdul Aziz, Umar |
| collection | ePrints |
| description | Silicon (Si) device down-scaling is facing a big challenge to maintain its high drive current capability along with lower leakage current. Due to its similarities with Si, the interest has been focused on Germanium (Ge) as a substitute for device substrate. However, there are major problems in fabricating complementary metal-oxide semiconductor (CMOS) devices i.e. poor dopant solubility, low dopant activation and large dopant diffusion coefficient. These required further optimization on fabrication parameters involving ion implantation process. This paper reports the optimization of ion implantation parameters such as energy and dose. Co-implantation technique employing two atoms with different size will be adopted for forming the shallow n+/p junction in Ge. The stress associated with atomic size is expected to be introduced into the Ge lattice. This stress will be manipulated to enhance dopant activation while controlling the diffusion. Low energy of dopant-ion implantation is selected to achieve high dopant concentration near the surface. The simulation parameters of two atoms were arranged to get such result where the effect of stress from co-implantation process can be manipulated. |
| first_indexed | 2024-03-05T19:56:37Z |
| format | Conference or Workshop Item |
| id | utm.eprints-63400 |
| institution | Universiti Teknologi Malaysia - ePrints |
| language | English |
| last_indexed | 2024-03-05T19:56:37Z |
| publishDate | 2015 |
| record_format | dspace |
| spelling | utm.eprints-634002017-08-20T08:41:08Z http://eprints.utm.my/63400/ Optimization of ion implantation using trim software for the formation of shallow n+/p junction in germanium substrate Abdul Aziz, Umar Nur Farhana Arissa, Nur Farhana Arissa Aid, Siti Rahmah Yahaya, Hafizal Centeno, Anthony Matsumoto, Satoru Uedono, Akira Mcphail, David QD Chemistry Silicon (Si) device down-scaling is facing a big challenge to maintain its high drive current capability along with lower leakage current. Due to its similarities with Si, the interest has been focused on Germanium (Ge) as a substitute for device substrate. However, there are major problems in fabricating complementary metal-oxide semiconductor (CMOS) devices i.e. poor dopant solubility, low dopant activation and large dopant diffusion coefficient. These required further optimization on fabrication parameters involving ion implantation process. This paper reports the optimization of ion implantation parameters such as energy and dose. Co-implantation technique employing two atoms with different size will be adopted for forming the shallow n+/p junction in Ge. The stress associated with atomic size is expected to be introduced into the Ge lattice. This stress will be manipulated to enhance dopant activation while controlling the diffusion. Low energy of dopant-ion implantation is selected to achieve high dopant concentration near the surface. The simulation parameters of two atoms were arranged to get such result where the effect of stress from co-implantation process can be manipulated. 2015 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utm.my/63400/1/SatoruMatsumoto2015_OptimizationofIonImplantationUsingTrimSoftware.pdf Abdul Aziz, Umar and Nur Farhana Arissa, Nur Farhana Arissa and Aid, Siti Rahmah and Yahaya, Hafizal and Centeno, Anthony and Matsumoto, Satoru and Uedono, Akira and Mcphail, David (2015) Optimization of ion implantation using trim software for the formation of shallow n+/p junction in germanium substrate. In: Malaysia-Japan Joint International Conference 2015 (MJJIC 2015), 13-15 Nov, 2015, Japan. |
| spellingShingle | QD Chemistry Abdul Aziz, Umar Nur Farhana Arissa, Nur Farhana Arissa Aid, Siti Rahmah Yahaya, Hafizal Centeno, Anthony Matsumoto, Satoru Uedono, Akira Mcphail, David Optimization of ion implantation using trim software for the formation of shallow n+/p junction in germanium substrate |
| title | Optimization of ion implantation using trim software for the formation of shallow n+/p junction in germanium substrate |
| title_full | Optimization of ion implantation using trim software for the formation of shallow n+/p junction in germanium substrate |
| title_fullStr | Optimization of ion implantation using trim software for the formation of shallow n+/p junction in germanium substrate |
| title_full_unstemmed | Optimization of ion implantation using trim software for the formation of shallow n+/p junction in germanium substrate |
| title_short | Optimization of ion implantation using trim software for the formation of shallow n+/p junction in germanium substrate |
| title_sort | optimization of ion implantation using trim software for the formation of shallow n p junction in germanium substrate |
| topic | QD Chemistry |
| url | http://eprints.utm.my/63400/1/SatoruMatsumoto2015_OptimizationofIonImplantationUsingTrimSoftware.pdf |
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