Characterization of planar and vertical n-channel mosfet in nanometer regime
In recent years, there is more and more design on MOSFET that has been developed to fulfill the market need. This project focused on the comparison of planar and vertical n-channel MOS transistor characteristic with effective channel length of 100nm down to 50nm. Planar and vertical n-channel MOS tr...
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| Formato: | Tese |
| Idioma: | English |
| Publicado em: |
2007
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| Acesso em linha: | http://eprints.utm.my/6389/1/ImaSulaimanMFKE2007.pdf |