Effect of methane flow rate to SiC thin films morphology deposited by VHF-PECVD
Silicon carbide (SiC) thin films have been grown in a very high frequency-plasma enhanced chemical vapour deposition (VHF-PECVD) system designed and developed in our laboratory. Silane (SiH4) and methane (CH4) were used as precursor gases. The effect of methane flow rate on the structural and morpho...
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| Format: | Conference or Workshop Item |
| Published: |
ICAMN 2016
2016
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