Microstructure and dielectric properties of CaCu3Ti4O12 ceramic
CaCu3Ti4O12 (CCTO) was prepared by the solid state technique. The sample was calcined at 900 °C/12 h and sintered at 1050 °C/24 h, then subjected to XRD to ensure CCTO formation. The microstructure was observed by SEM. XRD results identified both samples as single phase CCTO, whereas the microstru...
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Elservier
2007
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