Microstructure and dielectric properties of CaCu3Ti4O12 ceramic
CaCu3Ti4O12 (CCTO) was prepared by the solid state technique. The sample was calcined at 900 °C/12 h and sintered at 1050 °C/24 h, then subjected to XRD to ensure CCTO formation. The microstructure was observed by SEM. XRD results identified both samples as single phase CCTO, whereas the microstru...
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| Format: | Article |
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Elservier
2007
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| author | Mohamed, Julie J. Hutagalung, Sabar D. Ain, M. Fadzil Deraman, Karim Ahmad, Zainal A. |
| author_facet | Mohamed, Julie J. Hutagalung, Sabar D. Ain, M. Fadzil Deraman, Karim Ahmad, Zainal A. |
| author_sort | Mohamed, Julie J. |
| collection | ePrints |
| description | CaCu3Ti4O12 (CCTO) was prepared by the solid state technique. The sample was calcined at 900 °C/12 h and sintered at 1050 °C/24 h, then subjected to XRD to ensure CCTO formation. The microstructure was observed by SEM. XRD results identified both samples as single phase CCTO, whereas the microstructure shows abnormal grain growth and large pores. Sintering was studied in the temperature range of 950–1050 °C for 3–12 h. Increasing sintering temperature enhances the density and secondary formation of Cu2O. A clear grain boundary and dense microstructure were observed. The results show that the sample sintered at 1040 °C/10 h yields a clearly uniform grain size with the highest εr (33,210) |
| first_indexed | 2024-03-05T18:09:39Z |
| format | Article |
| id | utm.eprints-6717 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T18:09:39Z |
| publishDate | 2007 |
| publisher | Elservier |
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| spelling | utm.eprints-67172008-10-29T09:09:55Z http://eprints.utm.my/6717/ Microstructure and dielectric properties of CaCu3Ti4O12 ceramic Mohamed, Julie J. Hutagalung, Sabar D. Ain, M. Fadzil Deraman, Karim Ahmad, Zainal A. TJ Mechanical engineering and machinery QC Physics CaCu3Ti4O12 (CCTO) was prepared by the solid state technique. The sample was calcined at 900 °C/12 h and sintered at 1050 °C/24 h, then subjected to XRD to ensure CCTO formation. The microstructure was observed by SEM. XRD results identified both samples as single phase CCTO, whereas the microstructure shows abnormal grain growth and large pores. Sintering was studied in the temperature range of 950–1050 °C for 3–12 h. Increasing sintering temperature enhances the density and secondary formation of Cu2O. A clear grain boundary and dense microstructure were observed. The results show that the sample sintered at 1040 °C/10 h yields a clearly uniform grain size with the highest εr (33,210) Elservier 2007-04 Article PeerReviewed Mohamed, Julie J. and Hutagalung, Sabar D. and Ain, M. Fadzil and Deraman, Karim and Ahmad, Zainal A. (2007) Microstructure and dielectric properties of CaCu3Ti4O12 ceramic. Material Letters, 61 (8-9). pp. 1835-1838. http://dx.doi.org/10.1016/j.matlet.2006.07.192 10.1016/j.matlet.2006.07.192 |
| spellingShingle | TJ Mechanical engineering and machinery QC Physics Mohamed, Julie J. Hutagalung, Sabar D. Ain, M. Fadzil Deraman, Karim Ahmad, Zainal A. Microstructure and dielectric properties of CaCu3Ti4O12 ceramic |
| title | Microstructure and dielectric properties of CaCu3Ti4O12 ceramic |
| title_full | Microstructure and dielectric properties of CaCu3Ti4O12 ceramic |
| title_fullStr | Microstructure and dielectric properties of CaCu3Ti4O12 ceramic |
| title_full_unstemmed | Microstructure and dielectric properties of CaCu3Ti4O12 ceramic |
| title_short | Microstructure and dielectric properties of CaCu3Ti4O12 ceramic |
| title_sort | microstructure and dielectric properties of cacu3ti4o12 ceramic |
| topic | TJ Mechanical engineering and machinery QC Physics |
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