Junction formation with HWCVD and TCAD model of an epitaxial back contact solar cell
In this paper, we present morphological and electrical characteristics of a junction formed of Si p-type films deposited on an n-type silicon wafer using a hot wire chemical vapor deposition (HWCVD) tool. We describe the fabrication process and study the influence of diborane flow and postprocess an...
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| Format: | Article |
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IEEE Electron Devices Society
2016
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