Modeling and simulation of graphene-oxide-based RRAM

We propose a conduction model for resistive random-access memory (RRAM) based on graphene oxide (GO). We associate the electron transport mechanism with a multiphonon trap-assisted tunneling (MTAT) model. Pristine GO is electrically insulating due to the presence of sp3-hybridized oxygen functional...

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Bibliographic Details
Main Authors: Lim, E. W., Ahmadi, M. T., Ismail, R.
Format: Article
Published: Springer New York LLC 2016
Subjects: