Non-ballistic Modeling Transport of Phonon Scattering in Carbon Nanotube and Silicon Nanowire Field-Effect Transistors
The effects of acoustic and optical phonon scattering on the electrical transport characteristic of carbon nanotube (CNT) and silicon nanowire (Si NW) field-effect transistors (FETs) are examined using the top of the barrier model. The phonon scattering effects are incorporated into the device model...
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| Format: | Conference or Workshop Item |
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Institute of Electrical and Electronics Engineers Inc.
2016
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