A charge-based compact modeling of cylindrical surrounding-floating gate MOSFET (S-FGMOSFET) for memory cell application
A charge-based compact model of the long-channel cylindrical surrounding-floating gate (S-FG) MOSFETs for memory cell application is presented. The compact model is based on an accurate extraction of floating gate potential using charge balance model and solving the mobile charge density at the sour...
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| Format: | Conference or Workshop Item |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2016
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