Computational modeling and characterization of X-Bi (X = B, Al, Ga, In) compounds: Prospective optoelectronic materials for infrared/near infra applications
III-V compounds containing heavy Bi anion are distinguished from remaining III-V family in terms of their narrower electronic energy gap and potential application for infrared/near infra devices. In the present work, modeling of X-Bi (X = B, Al, Ga and In) compounds and the investigations pertaining...
| Main Authors: | , , , , , , |
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| Format: | Article |
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Elsevier
2016
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