Device design consideration for nanoscale MOSFET using semiconductor TCAD tools
The evolution of metal-oxide-semiconductor field effect transistor (MOSFET) technology has been governed mainly by device scaling over the past twenty years. One of the key questions concerning future ULSI technology is whether MOSFET devices can be scaled to 100 nmchannel length and beyond for cont...
| Автори: | , |
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| Формат: | Conference or Workshop Item |
| Мова: | English |
| Опубліковано: |
2006
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| Предмети: | |
| Онлайн доступ: | http://eprints.utm.my/7496/1/Razali_Ismail_2006_Device_Design_Consideration_for_Nanoscale.pdf |