Interdigital-gated HEMT structure for high frequency devices
Interdigital-gated AlGaAs/GaAs high electron mobility transistor (HEMT) structure was used to investigate the interaction between the drifting carrier plasma waves and electromagnetic (EM) waves. It was shown theoretically that the interaction in the range from microwave to terahertz (THz) at room t...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2006
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| Subjects: | |
| Online Access: | http://eprints.utm.my/7633/1/Hashim_Abdul_Manaf_2006_Interdigital-Gated_HEMT_Structure__High.pdf |