Interdigital-gated HEMT structure for high frequency devices
Interdigital-gated AlGaAs/GaAs high electron mobility transistor (HEMT) structure was used to investigate the interaction between the drifting carrier plasma waves and electromagnetic (EM) waves. It was shown theoretically that the interaction in the range from microwave to terahertz (THz) at room t...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
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2006
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| Online Access: | http://eprints.utm.my/7633/1/Hashim_Abdul_Manaf_2006_Interdigital-Gated_HEMT_Structure__High.pdf |
| _version_ | 1796854248462352384 |
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| author | Hashim, Abdul Manaf Kasai, Seiya Hashizume, Tamotsu Hasegawa, Hideki |
| author_facet | Hashim, Abdul Manaf Kasai, Seiya Hashizume, Tamotsu Hasegawa, Hideki |
| author_sort | Hashim, Abdul Manaf |
| collection | ePrints |
| description | Interdigital-gated AlGaAs/GaAs high electron mobility transistor (HEMT) structure was used to investigate the interaction between the drifting carrier plasma waves and electromagnetic (EM) waves. It was shown theoretically that the interaction in the range from microwave to terahertz (THz) at room temperature should produce negative conductance characteristics when the carrier drift velocity slightly exceeds the phase velocity of EM waves. S-parameter reflection measurements were carried out at room temperature for a frequency range from 1 to 20 GHz and a drastic change in conductance was observed at 5GHz and 10GHz with the increase of drain-source voltage. Large conductance change over 1000 mS/mm was obtained and it showed a peak at a certain frequency. The peak position could be controlled by changing the pitch size of the interdigital gates. These characteristics can be used for high frequency applications such as high-speed switching devices although a feature size of our interdigital-gated HEMT device is much larger than conventional HEMT device. |
| first_indexed | 2024-03-05T18:11:35Z |
| format | Conference or Workshop Item |
| id | utm.eprints-7633 |
| institution | Universiti Teknologi Malaysia - ePrints |
| language | English |
| last_indexed | 2024-03-05T18:11:35Z |
| publishDate | 2006 |
| record_format | dspace |
| spelling | utm.eprints-76332017-08-30T01:41:57Z http://eprints.utm.my/7633/ Interdigital-gated HEMT structure for high frequency devices Hashim, Abdul Manaf Kasai, Seiya Hashizume, Tamotsu Hasegawa, Hideki TK Electrical engineering. Electronics Nuclear engineering Interdigital-gated AlGaAs/GaAs high electron mobility transistor (HEMT) structure was used to investigate the interaction between the drifting carrier plasma waves and electromagnetic (EM) waves. It was shown theoretically that the interaction in the range from microwave to terahertz (THz) at room temperature should produce negative conductance characteristics when the carrier drift velocity slightly exceeds the phase velocity of EM waves. S-parameter reflection measurements were carried out at room temperature for a frequency range from 1 to 20 GHz and a drastic change in conductance was observed at 5GHz and 10GHz with the increase of drain-source voltage. Large conductance change over 1000 mS/mm was obtained and it showed a peak at a certain frequency. The peak position could be controlled by changing the pitch size of the interdigital gates. These characteristics can be used for high frequency applications such as high-speed switching devices although a feature size of our interdigital-gated HEMT device is much larger than conventional HEMT device. 2006 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utm.my/7633/1/Hashim_Abdul_Manaf_2006_Interdigital-Gated_HEMT_Structure__High.pdf Hashim, Abdul Manaf and Kasai, Seiya and Hashizume, Tamotsu and Hasegawa, Hideki (2006) Interdigital-gated HEMT structure for high frequency devices. In: 2006 International RF and Microwave Conference, (RFM) Proceedings, 12 - 14 Sept 2006, Putrajaya, Malaysia. http://dx.doi.org/10.1109/RFM.2006.331082 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Hashim, Abdul Manaf Kasai, Seiya Hashizume, Tamotsu Hasegawa, Hideki Interdigital-gated HEMT structure for high frequency devices |
| title | Interdigital-gated HEMT structure for high frequency devices |
| title_full | Interdigital-gated HEMT structure for high frequency devices |
| title_fullStr | Interdigital-gated HEMT structure for high frequency devices |
| title_full_unstemmed | Interdigital-gated HEMT structure for high frequency devices |
| title_short | Interdigital-gated HEMT structure for high frequency devices |
| title_sort | interdigital gated hemt structure for high frequency devices |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utm.my/7633/1/Hashim_Abdul_Manaf_2006_Interdigital-Gated_HEMT_Structure__High.pdf |
| work_keys_str_mv | AT hashimabdulmanaf interdigitalgatedhemtstructureforhighfrequencydevices AT kasaiseiya interdigitalgatedhemtstructureforhighfrequencydevices AT hashizumetamotsu interdigitalgatedhemtstructureforhighfrequencydevices AT hasegawahideki interdigitalgatedhemtstructureforhighfrequencydevices |