Analytical study of drift velocity in low dimensional devices
Understanding of quantum limit in low dimensional devices helps to develop the new device types same as Carbon Nanotube Field Effect Transistor (CNTFET) and Naonowire. For each dimensionality the limitations on carrier drift velocity due to the high-field streaming of otherwise randomly velocity vec...
| Հիմնական հեղինակներ: | , , , , |
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| Ձևաչափ: | Հոդված |
| Լեզու: | English |
| Հրապարակվել է: |
Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia
2008
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| Խորագրեր: | |
| Առցանց հասանելիություն: | http://eprints.utm.my/7662/1/MohammadTAhmadi2008_AnalyticalStudyofDriftVelocity.pdf |