Performance evaluation of 14 nm FinFET-Based 6T static random access memory cell functionality for DC and transient analysis
This research focuses on the evaluation of the characteristics of the independently controlled FinFET gate structure in a static random access memory (SRAM) circuitry. It is developed based on the BSIM-CMG model for common gate FinFET. The independently controlled FinFET gate was constructed using t...
| Main Authors: | , , , , |
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| Format: | Article |
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American Scientific Publishers
2018
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