Explicit continuous charge-based compact model of surrounding gate MOSFET (SRGMOSFET) with smooth transition between partially-depleted to fully-depleted operation
A charge-based compact model that includes the dynamic depletion behavior for arbitrary doped surrounding gate MOSFET (SRGMOSFET) is presented in this paper. The one-dimensional Poisson's equation is first solved to obtain the continuous explicit solution of the mobile charge density and drain...
| Main Authors: | , , , , |
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| Format: | Article |
| Published: |
IOP Publishing Ltd
2020
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