Top-down fabrication process of ZnO NWFETs

ZnO NWFETs were fabricated with and without Al2O3 passivation. This was done by developing a new recipe for depositing the thin film of ZnO. By using a high donor concentration of 1.7 x 1018 cm-3 for the thin film, contact resistance values were lowered (passivated device had Rcon = 2.5 x 104 Ω; unp...

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Bibliographic Details
Main Authors: Ditshego, Nonofo M. J., Sultan, Suhana Mohamed
Format: Article
Language:English
Published: Trans Tech Publications Ltd 2019
Subjects:
Online Access:http://eprints.utm.my/87832/1/SuhanaMohamedSultan2019_TopDownFabricationProcessofZnoNwfets.pdf