Compact modeling of strained GAA SiNW
Strain-based on advanced MOSFET is a promising candidate for the future of CMOS technology. A numerical model is not favorable compared to a compact model because it cannot be integrated into most simulator software. Thus, a compact model is proposed to overcome the shortcomings in the analytical mo...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute of Advanced Engineering and Science
2019
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| Subjects: | |
| Online Access: | http://eprints.utm.my/88768/1/MAnasRazali2019_CompactModelingofStrainedGaaSinw.pdf |