Reliability of graphene as charge storage layer in floating gate flash memory
This study aims to investigate the memory performances of graphene as a charge storage layer in the floating gate with difference doping concentration of n-channel and p-channel substrates using Silvaco ATLAS TCAD Tools. The simulation work has been done to determine the performance of flash memory...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Published: |
Institute of Advanced Engineering and Science
2019
|
| Subjects: |