Effects of post-deposition annealing temperatures on the composition of interfacial layer at Germanium (Ge)/Aluminium Oxide (Al2O3)

Effects of post-deposition annealing temperatures on the composition of interfacial layer at Germanium (Ge)/Aluminium Oxide (Al2O3)

Show other versions (1)

The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation...

Full description

Bibliographic Details
Main Authors: Sahari, Siti Kudnie, Nik Zaini Fathi, Nik Amni Fathi, Hamzah, Azrul Azlan, Mohamed Sutan, Norsuzailina, Embong, Zaidi, Mohamed Sultan, Suhana, Kashif, Muhammad, Sawawi, Marini, Hasanah, Lilik, Sapawi, Rohana, Kipli, Kuryati, Kram, Abdul Rahman, Junaidi, Nazreen
Format: Article
Language:English
Published: Penerbit UKM 2019
Subjects:
TA Engineering (General). Civil engineering (General)
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/88993/1/SuhanaMohamedSultan2019_EffectsofPostDepositionAnnealingTemperatures.pdf

Internet

http://eprints.utm.my/88993/1/SuhanaMohamedSultan2019_EffectsofPostDepositionAnnealingTemperatures.pdf

Similar Items