Investigation of transition diode properties of rGO‐GO/n‐Si heterojunction
Thermal annealing in the range of 100–700 °C is applied to reduce the graphene oxide (GO) film into reduced-GO (rGO). Raman spectrum analysis and film conductivity analysis via Hall measurement confirms the advancement of reduction degree at higher annealing temperature (AT). The film conductivity i...
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| Format: | Article |
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Wiley-VCH Verlag
2019
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