Properties of rapid thermal oxidized p-type germanium and its metal-oxide-semiconductor capacitor structure
In this study, p-type Ge surface was oxidized using a rapid thermal technique at temperatures of 380°C, 400°C, 450°C and 500°C, and annealing time of 5 min, 10 min and 15 min in oxygen (O2) with fixed flow rate of 1.0 l/min. It was found that the surface roughness of germanium oxide (GeOx) decreases...
| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | http://eprints.utm.my/89652/1/NoraniAbManaf2019_PropertiesofRapidThermalOxidized.pdf |