Optimizing the efficiency of gallium nitride-based light-emitting diodes from contact area of current spreading to electrode
A nonuniform current spreading in the current spreader layer greatly reduced the internal quantum efficiency (IQE) of the light-emitting diodes (LED). The effects of the current spreading layer on the electrode contact area toward the IQE in a vertical design of gallium nitride (GaN)-based LED chip...
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| Format: | Article |
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John Wiley and Sons Inc
2021
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