Preliminary study on laser annealed NP junction in phosphorus implanted germanium
One option in enhancing metal-oxide-semiconductor transistor devices is by replacing silicon with high-mobility material of germanium. However, fabrication of Ge np junction faces low dopant activation problem due to the interaction between dopant and defect that was originated from ion implantation...
Main Authors: | , , , , |
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Format: | Conference or Workshop Item |
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2020
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