Device performance of silicene nanoribbon field-effect transistor under ballistic transport
Ballistic device performance of monolayer silicene nanoribbon (SiNR) field-effect transistors (FETs) is investigated in this paper. The electronic band structure of SiNR is calculated within the nearest neighbour tight-binding approximation. The top of the barrier ballistic transistor model is emplo...
| Main Authors: | , , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | http://eprints.utm.my/94020/1/ChuanMuWen2020_DevicePerformanceofSiliceneNanoribbon.pdf |