Finite element analysis of material removal rate for Si wafer using heat-assisted µEDM

Micro-electrical discharge machining (µEDM) has been proved to produce high surface quality results in Si machining. In previous studies, the researchers reported the Si machining using the µEDM with several strategies such as plating, doping and temporary coating process to be machined by the µEDM....

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Main Authors: Daud, Noor Dzulaikha, Nafea, Marwan, Mohamed Ali, Mohamed Sultan
Format: Article
Language:English
Published: Penerbit UTM Press 2021
Subjects:
Online Access:http://eprints.utm.my/97816/1/MohamedSultan2021_FiniteElementAnalysisofMaterialRemoval.pdf
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author Daud, Noor Dzulaikha
Nafea, Marwan
Mohamed Ali, Mohamed Sultan
author_facet Daud, Noor Dzulaikha
Nafea, Marwan
Mohamed Ali, Mohamed Sultan
author_sort Daud, Noor Dzulaikha
collection ePrints
description Micro-electrical discharge machining (µEDM) has been proved to produce high surface quality results in Si machining. In previous studies, the researchers reported the Si machining using the µEDM with several strategies such as plating, doping and temporary coating process to be machined by the µEDM. This paper reports a numerical simulation of MRR performance results using COMSOL Multiphysics. The effects of the machining temperature in Si machining using heat-assisted µEDM on achieving the optimum MRR results is studied. The simulation results showed the highest MRR is 1.48666 × 10-5 mm3/seconds achieved at 250 °C.
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spelling utm.eprints-978162022-11-02T09:45:45Z http://eprints.utm.my/97816/ Finite element analysis of material removal rate for Si wafer using heat-assisted µEDM Daud, Noor Dzulaikha Nafea, Marwan Mohamed Ali, Mohamed Sultan TK Electrical engineering. Electronics Nuclear engineering Micro-electrical discharge machining (µEDM) has been proved to produce high surface quality results in Si machining. In previous studies, the researchers reported the Si machining using the µEDM with several strategies such as plating, doping and temporary coating process to be machined by the µEDM. This paper reports a numerical simulation of MRR performance results using COMSOL Multiphysics. The effects of the machining temperature in Si machining using heat-assisted µEDM on achieving the optimum MRR results is studied. The simulation results showed the highest MRR is 1.48666 × 10-5 mm3/seconds achieved at 250 °C. Penerbit UTM Press 2021-09-15 Article PeerReviewed application/pdf en http://eprints.utm.my/97816/1/MohamedSultan2021_FiniteElementAnalysisofMaterialRemoval.pdf Daud, Noor Dzulaikha and Nafea, Marwan and Mohamed Ali, Mohamed Sultan (2021) Finite element analysis of material removal rate for Si wafer using heat-assisted µEDM. ELEKTRIKA- Journal of Electrical Engineering, 20 (2-2). pp. 15-19. ISSN 0128-4428 https://elektrika.utm.my/index.php/ELEKTRIKA_Journal/article/view/301 NA
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Daud, Noor Dzulaikha
Nafea, Marwan
Mohamed Ali, Mohamed Sultan
Finite element analysis of material removal rate for Si wafer using heat-assisted µEDM
title Finite element analysis of material removal rate for Si wafer using heat-assisted µEDM
title_full Finite element analysis of material removal rate for Si wafer using heat-assisted µEDM
title_fullStr Finite element analysis of material removal rate for Si wafer using heat-assisted µEDM
title_full_unstemmed Finite element analysis of material removal rate for Si wafer using heat-assisted µEDM
title_short Finite element analysis of material removal rate for Si wafer using heat-assisted µEDM
title_sort finite element analysis of material removal rate for si wafer using heat assisted µedm
topic TK Electrical engineering. Electronics Nuclear engineering
url http://eprints.utm.my/97816/1/MohamedSultan2021_FiniteElementAnalysisofMaterialRemoval.pdf
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AT mohamedalimohamedsultan finiteelementanalysisofmaterialremovalrateforsiwaferusingheatassistedμedm