Performance analysis of junctionless multi-bridge channel FET with strained SiGe application
In this work, a 12 nm 3-Dimensional (3D) strained Junctionless (JL) Multi-Bridge Channel Field Effect Transistor (MBCFET) with different Germanium (Ge) mole fractions from 0.1 to 0.4 are presented. The strain used in this work is Silicon-Germanium (SiGe) which is applied in between the channels of M...
| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2022
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| Subjects: |