INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY
The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented. The specific features of the functioning of various constructive solutions IGBT a...
| Үндсэн зохиолчид: | , , |
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| Формат: | Өгүүллэг |
| Хэл сонгох: | Russian |
| Хэвлэсэн: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Цуврал: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://doklady.bsuir.by/jour/article/view/822 |