Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources

Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources

Opis bibliograficzny
Główni autorzy:	Atsushi Tanide, Shohei Nakamura, Akira Horikoshi, Shigeru Takatsuji, Takahiro Kimura, Kazuo Kinose, Soichi Nadahara, Masazumi Nishikawa, Akinori Ebe, Kenji Ishikawa, Osamu Oda, Masaru Hori
Format:	Artykuł
Język:	English
Wydane:	American Chemical Society 2020-10-01
Seria:	ACS Omega
Dostęp online:	https://doi.org/10.1021/acsomega.0c03865

Podobne zapisy

Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition
od: Arun Kumar Dhasiyan, i wsp.
Wydane: (2024-05-01)

Author Correction: Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition
od: Arun Kumar Dhasiyan, i wsp.
Wydane: (2024-12-01)

Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)
od: Frank Wilson Amalraj, i wsp.
Wydane: (2018-11-01)

Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature
od: Shang Chen, i wsp.
Wydane: (2012-06-01)

Study of sputtered tin schottky barrier diode for Gan-hemt applications
od: Li, Kang
Wydane: (2016)

Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
od: Shamsuddin, Siti Nur Atikah
Wydane: (2019)

Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN
od: Yusuke Sakai, i wsp.
Wydane: (2013-08-01)

Review of GaN Thin Film and Nanorod Growth Using Magnetron Sputter Epitaxy
od: Aditya Prabaswara, i wsp.
Wydane: (2020-04-01)

Identification of Self-Buffer Layer on GaN/glass Films Grown by Reactive Sputtering
od: R. S. de Oliveira, i wsp.
Wydane: (2023-07-01)

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering
od: Kohei Ueno, i wsp.
Wydane: (2017-12-01)

Pulsed sputtering selective epitaxial formation of highly degenerate n-type GaN ohmic contacts for GaN HEMT applications
od: Ryota Maeda, i wsp.
Wydane: (2024-01-01)

Growth Of Gan Films On Gaas (100) Substrate By Rf-Sputtering And E-Beam Evaporation Techniques
od: Md Taib, Muhamad Ikram
Wydane: (2016)

Growth of non-polar and semi-polar GaN on sapphire substrates by magnetron sputter epitaxy
od: Katrin Pingen, i wsp.
Wydane: (2025-03-01)

Characterization and simulation of sputtering etched profile by focused gallium ion beam on GaN substrate
od: Xi Lin, i wsp.
Wydane: (2022-04-01)

Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering
od: Kohei Ueno, i wsp.
Wydane: (2019-07-01)

Rapid Metabolic Recovery of Donor Circulatory Death Liver Graft Using Whole Blood Perfusion: A Pig Study
od: Syuhei Yoshimoto, MS, i wsp.
Wydane: (2021-07-01)

Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering
od: Atsushi Kobayashi, i wsp.
Wydane: (2023-01-01)

Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates
od: Elena Alexandra Serban, i wsp.
Wydane: (2017-09-01)

Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods
od: Mathias Forsberg, i wsp.
Wydane: (2017-04-01)

Electronic transport in reactively sputtered Mn3GaN films prepared under optimized nitrogen flow
od: Christoph Sürgers, i wsp.
Wydane: (2024-01-01)

High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering
od: Yasuaki Arakawa, i wsp.
Wydane: (2016-08-01)

Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers
od: Shuo-Wei Chen, i wsp.
Wydane: (2016-04-01)

Development of Removable Hollow Cathode Discharge Apparatus for Sputtering Solid Metals
od: Daisuke Ishikawa, i wsp.
Wydane: (2019-01-01)

High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN
od: Ali, A.H., i wsp.
Wydane: (2016)

Low-field transport properties and scattering mechanisms of degenerate n-GaN by sputtering from a liquid Ga target
od: P. Döring, i wsp.
Wydane: (2024-01-01)

Low temperature processed CO2 laser-assisted RF-sputtered GaN thin film for wide bandgap semiconductors
od: Seoung-Hyoun Kim, i wsp.
Wydane: (2023-01-01)

Effects of Ion Bombardment Energy Flux on Chemical Compositions and Structures of Hydrogenated Amorphous Carbon Films Grown by a Radical-Injection Plasma-Enhanced Chemical Vapor Deposition
od: Hirotsugu Sugiura, i wsp.
Wydane: (2019-01-01)

Wave-packet effects: a solution for isospin anomalies in vector-meson decay
od: Kenzo Ishikawa, i wsp.
Wydane: (2023-10-01)

Realization of low specific-contact-resistance on N-polar GaN surfaces using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique
od: Shinji Yamada, i wsp.
Wydane: (2024-01-01)

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN
od: Li, Yang, i wsp.
Wydane: (2017)

Sputter Deposited Nanocarbon Film Electrodes for Electrochemical Analysis of Biomolecules
od: Osamu NIWA, i wsp.
Wydane: (2024-02-01)

The physics of sputtering
od: Stocker, B. J.
Wydane: (1962)

Structural, Morphological, Vibrational and Optical Properties of GaN Films Grown by Reactive Sputtering: The Effect of RF Power at Low Working Pressure Limit
od: R. S. de Oliveira, i wsp.
Wydane: (2022-01-01)

Plasma-Treated Sputtered Nanocarbon Film Electrodes for Suppressing Electrochemical Fouling by Serotonin
od: Saki OHTA, i wsp.
Wydane: (2020-09-01)

Sputtering by particle bombardment III : Characteristics of sputtered particles, technical applications /
od: Wittmaack, K.
Wydane: (1991)

Green-wavelength GaN-based photonic-crystal surface-emitting lasers
od: Natsuo Taguchi, i wsp.
Wydane: (2024-01-01)

Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma
od: Thi-Thuy-Nga Nguyen, i wsp.
Wydane: (2022-11-01)

Chemical bonding structure in porous SiOC films (k < 2.4) with high plasma-induced damage resistance
od: Hideshi Miyajima, i wsp.
Wydane: (2019-05-01)

Visible light modulator by sputter-deposited lithium niobate
od: Hideaki Fukuzawa, i wsp.
Wydane: (2022-06-01)

Aluminium nitride (AlN) as buffer layer for deposition of gallium nitride (GaN) thin films on silicon substrates using magnetron sputtering technique
od: Tahan, Muliana
Wydane: (2021)