Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources
Main Authors: | Atsushi Tanide, Shohei Nakamura, Akira Horikoshi, Shigeru Takatsuji, Takahiro Kimura, Kazuo Kinose, Soichi Nadahara, Masazumi Nishikawa, Akinori Ebe, Kenji Ishikawa, Osamu Oda, Masaru Hori |
---|---|
格式: | 文件 |
语言: | English |
出版: |
American Chemical Society
2020-10-01
|
丛编: | ACS Omega |
在线阅读: | https://doi.org/10.1021/acsomega.0c03865 |
相似书籍
-
Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition
由: Arun Kumar Dhasiyan, et al.
出版: (2024-05-01) -
Author Correction: Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition
由: Arun Kumar Dhasiyan, et al.
出版: (2024-12-01) -
Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)
由: Frank Wilson Amalraj, et al.
出版: (2018-11-01) -
Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature
由: Shang Chen, et al.
出版: (2012-06-01) -
Study of sputtered tin schottky barrier diode for Gan-hemt applications
由: Li, Kang
出版: (2016)