High Current Output Hydrogenated Diamond Triple-Gate MOSFETs
Planar-type and novel triple-gate fin-type hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated on a single-crystalline diamond substrate. The ratio between the height of the lateral side and the width of planar side for each fin of the triple...
| Main Authors: | , , , |
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| 格式: | 文件 |
| 语言: | English |
| 出版: |
IEEE
2019-01-01
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| 丛编: | IEEE Journal of the Electron Devices Society |
| 主题: | |
| 在线阅读: | https://ieeexplore.ieee.org/document/8708228/ |