Systematic Investigation of Gettering Effects on 4th Row Element Impurities in Si by Dopant Atoms
The gettering of 4th row element impurities (K, Ca, 3d transition metals, and Zn) in Si crystals by dopant atoms was systematically investigated by first-principles calculation through evaluation of the diffusion barrier and the binding energy. The dopant atoms considered include p-type dopants (B),...
| Autors principals: | , , |
|---|---|
| Format: | Article |
| Idioma: | English |
| Publicat: |
Hindawi Limited
2009-01-01
|
| Col·lecció: | Advances in Materials Science and Engineering |
| Accés en línia: | http://dx.doi.org/10.1155/2009/309209 |