Band-Engineered Structural Design of High-Performance Deep-Ultraviolet Light-Emitting Diodes

Band-Engineered Structural Design of High-Performance Deep-Ultraviolet Light-Emitting Diodes

In this study, systematic structural design was investigated numerically to probe into the cross-relating influences of n-AlGaN layer, quantum barrier (QB), and electron-blocking layer (EBL) on the output performance of AlGaN deep-ultraviolet (DUV) light-emitting diodes (LEDs) with various Al compos...

Deskribapen osoa

Xehetasun bibliografikoak
Egile Nagusiak: Jih-Yuan Chang, Man-Fang Huang, Chih-Yung Huang, Shih-Chin Lin, Ching-Chiun Wang, Yen-Kuang Kuo
Formatua: Artikulua
Hizkuntza:English
Argitaratua: MDPI AG 2021-03-01
Saila:Crystals
Gaiak:
AlGaN
carrier confinement
polarization effect
light-emitting diodes
Sarrera elektronikoa:https://www.mdpi.com/2073-4352/11/3/271

Internet

https://www.mdpi.com/2073-4352/11/3/271

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