Band-Engineered Structural Design of High-Performance Deep-Ultraviolet Light-Emitting Diodes

Band-Engineered Structural Design of High-Performance Deep-Ultraviolet Light-Emitting Diodes

In this study, systematic structural design was investigated numerically to probe into the cross-relating influences of n-AlGaN layer, quantum barrier (QB), and electron-blocking layer (EBL) on the output performance of AlGaN deep-ultraviolet (DUV) light-emitting diodes (LEDs) with various Al compos...

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Bibliographic Details
Main Authors: Jih-Yuan Chang, Man-Fang Huang, Chih-Yung Huang, Shih-Chin Lin, Ching-Chiun Wang, Yen-Kuang Kuo
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Crystals
Subjects:
AlGaN
carrier confinement
polarization effect
light-emitting diodes
Online Access:https://www.mdpi.com/2073-4352/11/3/271

Internet

https://www.mdpi.com/2073-4352/11/3/271

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