Investigation of graded channel effect on analog/linearity parameter analysis of junctionless surrounded gate graded channel MOSFET
Abstract Linearity analysis of nanoscale devices is a vital issue as nonlinearity behavior is exhibited by them when employed in circuits for microwave and RF applications. In this work, a junctionless surrounded gate-graded channel MOSFET (JLSGGC MOSFET) is investigated thoroughly to analyze its li...
Autori principali: | Sarita Misra, Sudhansu Mohan Biswal, Biswajit Baral, Sudhansu Kumar Pati |
---|---|
Natura: | Articolo |
Lingua: | English |
Pubblicazione: |
Springer
2023-12-01
|
Serie: | SN Applied Sciences |
Soggetti: | |
Accesso online: | https://doi.org/10.1007/s42452-023-05473-x |
Documenti analoghi
Documenti analoghi
-
Testing the Pauli Exclusion Principle across the Periodic Table with the VIP-3 Experiment
di: Simone Manti, et al.
Pubblicazione: (2024-09-01) -
Assessment of genetically modified cotton COT102 for food and feed uses, under Regulation (EC) No 1829/2003 (application EFSA‐GMO‐DE‐2017‐141)
di: EFSA Panel on Genetically Modified Organisms (GMO), et al.
Pubblicazione: (2023-06-01) -
Fibroblast Growth Factor Receptor, a Novel Receptor for Vegetative Insecticidal Protein Vip3Aa
di: Kun Jiang, et al.
Pubblicazione: (2018-12-01) -
Comparación de las técnicas de extracción del voltaje de umbral basadas en la característica gm/ID del MOSFETs.
di: Arturo Fajardo Jaimes
Pubblicazione: (2017-04-01) -
Comparative biodistribution profile of [131I]VIP and [131I]VIP10-28
di: Maria Tereza Colturato, et al.
Pubblicazione: (2005-10-01)