Radiation Defects in Heterostructures 3C-SiC/4H-SiC

Radiation Defects in Heterostructures 3C-SiC/4H-SiC

The effect of 8 MeV proton irradiation on n-3<i>C</i>-SiC epitaxial layers grown by sublimation on semi-insulating 4<i>H</i>-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence spectra. It...

Deskribapen osoa

Xehetasun bibliografikoak
Egile Nagusiak:	A.A. Lebedev, G.A. Oganesyan, V.V. Kozlovski, I.A. Eliseyev, P.V. Bulat
Formatua:	Artikulua
Hizkuntza:	English
Argitaratua:	MDPI AG 2019-02-01
Saila:	Crystals
Gaiak:	sublimation epitaxy 3C-SiC proton irradiation structural defects photoluminescence Hall effect Raman spectroscopy
Sarrera elektronikoa:	https://www.mdpi.com/2073-4352/9/2/115

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